Intermediate-band photovoltaic solar cell based on ZnTe:O
Abstract
Oxygen doping in ZnTe is applied to a junction diode in the aim of utilizing the associated electron states 0.5 eV below the bandedge as an intermediate band for photovoltaic solar cells. The ZnTe:O diodes confirm extended spectral response below the bandedge relative to undoped ZnTe diodes, and demonstrate a 100% increase in short circuit current, 15% decrease in open circuit voltage, and overall 50% increase in power conversion efficiency. Subbandgap excitation at 650 and 1550 nm confirms the response via a two-photon process and illustrates the proposed energy conversion mechanism for an intermediate band solar cell.
- Publication:
-
Applied Physics Letters
- Pub Date:
- July 2009
- DOI:
- 10.1063/1.3166863
- Bibcode:
- 2009ApPhL..95a1103W
- Keywords:
-
- 84.60.Jt;
- 85.30.Kk;
- 61.72.uj;
- 81.05.Dz;
- Photoelectric conversion: solar cells and arrays;
- Junction diodes;
- III-V and II-VI semiconductors;
- II-VI semiconductors