Integrated complementary graphene inverter
Abstract
The operation of a digital logic inverter consisting of one p- and one n-type graphene transistor integrated on the same sheet of monolayer graphene is demonstrated. Both transistors initially exhibited p-type behavior at low gate voltages, since air contamination shifted their Dirac points from zero to a positive gate voltage. Contaminants in one transistor were removed by electrical annealing, which shifted its Dirac point back and therefore restored n-type behavior. Boolean inversion is obtained by operating the transistors between their Dirac points. The fabricated inverter represents an important step toward the development of digital integrated circuits on graphene.
- Publication:
-
Applied Physics Letters
- Pub Date:
- June 2009
- DOI:
- 10.1063/1.3148342
- arXiv:
- arXiv:0904.2745
- Bibcode:
- 2009ApPhL..94v3312T
- Keywords:
-
- 84.30.Sk;
- 85.30.Tv;
- Pulse and digital circuits;
- Field effect devices;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 4 pages, 4 figures