Combinatorial Synthesis of (V1-x,Crx)2GeC Epitaxial Films
Abstract
We report the synthesis of solid solutions of (V1-x,Crx)2GeC epitaxial films on single crystal Al2O3 epi-polished substrates. The materials are sputtered from four cathodes; three are powered by rf-power supplies while one is driven by a dc-power supply. The materials are co-deposited at a temperature of 900 C and we get solubility across the whole range of compositions. The substrate-film interaction creates a strain which makes the new phase energetically favorable. The surface structure was measured using atomic force microscopy revealing that the composition has little impact on this property. We found a new MAX-phase material, (V0.5Cr0.5)4GeC3 , which has never been synthesized in bulk form. We report the conditions required to make these materials. In addition, electrical transport characteristics as a function of composition will be reported.
- Publication:
-
APS March Meeting Abstracts
- Pub Date:
- March 2009
- Bibcode:
- 2009APS..MARD13009S