Polarization dependent interface properties of ferroelectric Schottky barriers studied by soft X-ray absorption spectroscopy
Abstract
We applied soft X-ray absorption spectroscopy to study the Ti L-edge in ferroelectric capacitors using a modified total electron yield method. The inner photo currents and the X-ray absorption spectra were polarization state dependent. The results are explained on the basis of photo electric effects and the inner potential in the ferroelectric capacitors as a result of back-to-back Schottky barriers superimposed by the potential due to the depolarization field. In general, the presented method offers the opportunity to investigate the electronic structure of buried metal-insulator and metal-semiconductor interfaces in thin film devices. Corresponding author: h.h.kohlstedt@fz-juelich.de
- Publication:
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arXiv e-prints
- Pub Date:
- October 2008
- DOI:
- 10.48550/arXiv.0810.4272
- arXiv:
- arXiv:0810.4272
- Bibcode:
- 2008arXiv0810.4272K
- Keywords:
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- Condensed Matter - Materials Science