Evaluating intrinsic deformations in oxygen-containing precipitates
Abstract
A new method is proposed for evaluation of the intrinsic deformations of precipitates in silicon based on an analysis of the precipitate-dislocation arrays that appear at the late stages of multistep thermal treatment of silicon wafers. The estimate can be used for determining the fraction of a matrix substance present in the precipitate.
- Publication:
-
Technical Physics Letters
- Pub Date:
- February 2008
- DOI:
- 10.1007/s11455-008-2006-6
- Bibcode:
- 2008TePhL..34..106G
- Keywords:
-
- 61.46.Bc;
- 61.50.-f;
- 61.82.Fk;
- 62.20.-x;
- 61.46.Bc;
- 61.50.-f;
- 61.82.Fk;
- 62.20.-x;
- Clusters;
- Crystalline state;
- Semiconductors;
- Mechanical properties of solids