Electronic Spin Drift in Graphene Field-Effect Transistors
Abstract
We studied the drift of electron spins under an applied dc electric field in single layer graphene spin valves in a field-effect transport geometry at room temperature. In the metallic conduction regime (n≃3.5×1016m-2), for dc fields of about ±70kV/m applied between the spin injector and spin detector, the spin valve signals are increased or decreased, depending on the direction of the dc field and the carrier type, by as much as ±50%. Sign reversal of the drift effect is observed when switching from hole to electron conduction. In the vicinity of the Dirac neutrality point the drift effect is strongly suppressed. The experiments are in quantitative agreement with a drift-diffusion model of spin transport.
- Publication:
-
Physical Review Letters
- Pub Date:
- June 2008
- DOI:
- 10.1103/PhysRevLett.100.236603
- arXiv:
- arXiv:0802.2628
- Bibcode:
- 2008PhRvL.100w6603J
- Keywords:
-
- 72.25.Hg;
- 73.63.-b;
- Electrical injection of spin polarized carriers;
- Electronic transport in nanoscale materials and structures;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 4 figures