Acoustic phonon scattering limited carrier mobility in two-dimensional extrinsic graphene

We theoretically calculate the phonon scattering limited electron mobility in extrinsic (i.e., gated or doped with a tunable and finite carrier density) two-dimensional graphene layers as a function of temperature (T) and carrier density (n) . We find a temperature-dependent phonon-limited resistivity ρ_ph(T) to be linear in temperature for T≳50K with the room-temperature intrinsic mobility reaching the values of above 10⁵cm²/Vs . We comment on the low-temperature Bloch-Grüneisen behavior where ρ_ph(T)∼T⁴ for unscreened electron-phonon coupling.