Improvement in crystalline quality of thick GaInN on m-plane 6H-SiC substrates using sidewall epitaxial lateral overgrowth
Abstract
- Publication:
-
Physica Status Solidi C Current Topics
- Pub Date:
- July 2008
- DOI:
- 10.1002/pssc.200779252
- Bibcode:
- 2008PSSCR...5.3045S