Real-time ellipsometric study of Ge+ ion implanted SiO2 layers during fast annealing Shvets, V. A. ; Tyschenko, I. E. ; Chikichev, S. I. ; Prokopiev, V. Yu. Abstract Publication: Physica Status Solidi C Current Topics Pub Date: May 2008 DOI: 10.1002/pssc.200777815 Bibcode: 2008PSSCR...5.1287S