Transport property of the organic conductor α-(BEDT-STF)2I3 in the magnetic field
Abstract
One of the recent progresses in the field of investigation of organic conductors, is the discovery of a zero-gap conductor α-(BEDT-TTF)2I3. Under high pressure, this material exhibits mysterious transport behavior. For example, the resistance in the absence of magnetic field is nearly constant in a wide region of temperature. Now, we are in a stage where we can understand the behavior of α-(BEDT-TTF)2I3 based on the knowledge of zero-gap conductors. Quite recently, we found that, as out-of-plane magnetic field is applied, the Hall resistance, ρxy increases linearly with B and is saturated at a value h/e2(/number of layers). The saturation occurs in the field where zero-mode Landau carriers dominate the transport. We believe this is one of the key phenomena to characterize the transport of zero-gap conductors. In this work, we intend to make it clear if this characteristic behavior of ρxy is universal to zero-gap conductors. α-(BEDT-STF)2I3 has a crystal structure similar to that of α-(BEDT-TTF)2I3. The electron energy structures resemble each other. A serious diαerence, however, exists between these two materials. α-(BEDT-STF)2I3 contains 'intrinsic' lattice imperfections due to unsymmetrical molecular structure of BEDT-STF so that carries receive strong scattering. The purpose of this work is to answer the question whether the carriers in dirty zero-gap conductors shows transport phenomena similar to α-(BEDT-STF)2I3. The answer is yes.
- Publication:
-
Journal of Physics Conference Series
- Pub Date:
- October 2008
- DOI:
- 10.1088/1742-6596/132/1/012001
- Bibcode:
- 2008JPhCS.132a2001S