Trapped-Hole-Enhanced Erase-Level Shift by FN-Stress Disturb in Sub-90-nm-Node Embedded SONOS Memory
Abstract
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- June 2008
- DOI:
- 10.1109/TED.2008.921983
- Bibcode:
- 2008ITED...55.1464T