Etching-dependent reproducible memory switching in vertical SiO2 structures
Abstract
Vertical structures of SiO2 sandwiched between a top tungsten electrode and conducting nonmetallic substrate were fabricated by dry and wet etching methods. Both structures exhibit similar voltage-controlled memory behaviors, in which short voltage pulses (1 μs) can switch the devices between high- and low-impedance states. Through the comparison of current-voltage characteristics in structures made by different methods, filamentary conduction at the etched oxide edges is most consistent with the results, providing insights into similar behaviors in metal/SiO/metal systems. High ON/OFF ratios of over 104 were demonstrated.
- Publication:
-
Applied Physics Letters
- Pub Date:
- December 2008
- DOI:
- 10.1063/1.3045951
- arXiv:
- arXiv:0811.4099
- Bibcode:
- 2008ApPhL..93y3101Y
- Keywords:
-
- 84.32.Dd;
- Connectors relays and switches;
- Condensed Matter - Materials Science
- E-Print:
- 6 pages, 3 figures + 2 suppl. figures