Spatial Spectral Analysis in High Brightness GaInN/GaN Light Emitting Diodes
Abstract
We analyze GaInN based light emitting diodes emitting in the range of 400-550 nm using a new intensity-quantitative spectroscopic cathodoluminescence mapping method. Spectroscopic information of arbitrary sample locations is generated from sequences of quantitative image scans. From the temperature dependence of the intensity, we derive thermal activation energies of the dominant loss processes. Those compare well with the hole binding energies in the piezoelectric and quantized quantum well structures.
- Publication:
-
Advanced Semiconductor Devices
- Pub Date:
- June 2007
- DOI:
- 10.1142/9789812770332_0006
- Bibcode:
- 2007asd..conf...29D
- Keywords:
-
- GaInN LED;
- cathodoluminescence;
- electroluminescence;
- UV;
- blue and green