Advanced Semiconductor Devices

I. Wide band gap devices. Wide-Bandgap Semiconductor devices for automotive applications / M. Sugimoto ... [et al.]. A GaN on SiC HFET device technology for wireless infrastructure applications / B. Green ... [et al.]. Drift velocity limitation in GaN HEMT channels / A. Matulionis. Simulations of field-plated and recessed gate gallium nitride-based heterojunction field-effect transistors / V. O. Turin, M. S. Shur and D. B. Veksler. Low temperature electroluminescence of green and deep green GaInN/GaN light emitting diodes / Y. Li ... [et al.]. Spatial spectral analysis in high brightness GaInN/GaN light emitting diodes / T. Detchprohm ... [et al.]. Self-induced surface texturing of Al2O3 by means of inductively coupled plasma reactive ion etching in Cl2 chemistry / P. Batoni ... [et al.]. Field and termionic field transport in aluminium gallium arsenide heterojunction barriers / D. V. Morgan and A. Porch. Electrical characteristics and carrier lifetime measurements in high voltage 4H-SiC PiN diodes / P. A. Losee ... [et al.]. Geometry and short channel effects on enhancement-mode n-Channel GaN MOSFETs on p and n- GaN/sapphire substrates / W. Huang, T. Khan and T. P. Chow. 4H-SiC Vertical RESURF Schottky Rectifiers and MOSFETs / Y. Wang, P. A. Losee and T. P. Chow. Present status and future Directions of SiGe HBT technology / M. H. Khater ... [et al.]Optical properties of GaInN/GaN multi-quantum Wells structure and light emitting diode grown by metalorganic chemical vapor phase epitaxy / J. Senawiratne ... [et al.]. Electrical comparison of Ta/Ti/Al/Mo/Au and Ti/Al/Mo/Au Ohmic contacts on undoped GaN HEMTs structure with AlN interlayer / Y. Sun and L. F. Eastman. Above 2 A/mm drain current density of GaN HEMTs grown on sapphire / F. Medjdoub ... [et al.]. Focused thermal beam direct patterning on InGaN during molecular beam epitaxy / X. Chen, W. J. Schaff and L. F. Eastman -- II. Terahertz and millimeter wave devices. Temperature-dependent microwave performance of Sb-heterostructure backward diodes for millimeter-wave detection / N. Su ... [et al.]. A Mixed-signal row/Column architecture for very large monolithic mm-wave phased arrays / C. Carta, M. Seo and M. Rodwell. Terahertz emission from electrically pumped silicon germanium itersubband devices / N. Sustersic [et al.]. Terahertz sensing of materials / G. Xuan ... [et al.] -- III. silicon and SiGe devices. Negative bias temperature instability in TiN/HF-Silicate based gate stacks / N. A. Chowdhury, D. Misra and N. Rahim. Power adaptive control of dense configured super-self-aligned back-gate planar transistors / H. Lin ... [et al.]. Non-volatile high speed & low power charge trapping devices / M. K. Kim and S. Tiwari. High performance SiGeC/Si Near-IR electrooptic modulators and photodetectors / M. Schubert and F. Rana -- III. Silicon and SiGe devices. Negative bias temperature instability in TiN/HF-Silicate based gate stacks / N. A. Chowdhury, D. Misra and N. Rahim. Power adaptive control of dense configured super-self-aligned back-gate planar transistors / H. Lin ... [et al.]Non-volatile high speed & low power charge trapping devices / M. K. Kim and S. Tiwari. High performance SiGeC/Si Near-IR electrooptic modulators and photodetectors / M. Schubert and F. Rana -- IV. Nanoelelectronics and ballistic devices. Hybrid nanomaterials for multi-spectral infrared photodetection / A. D. Stiff-Roberts. Ballistic electron acceleration negative-differential-conductivity devices / B. Aslan ... [et al.] -- V. Photoluminescence and photocapacitance. Understanding ultraviolet emitter performance using intensity dependent Time-Resolved photoluminescence / M. Wraback ... [ et al.]. Photocapacitance of selectively doped AlGaAs/GaAs heterostructures containing deep traps / N. B. Gorev ... [et al.]