Effect of annealing on semi-insulating CdZnTe:Cl crystals with variable zinc content
Abstract
Semi-insulating Cd1- x Zn x Te:C1 crystals with variable zinc content ( x = 0.0002, 0.005, 0.01, and 0.1) were grown using the method of horizontal directional solidification. The effect of the conditions of post-growth annealing under controlled cadmium vapor pressure and additional low-temperature annealing on the main parameters responsible for the quality of nuclear radiation detectors based on such crystals were studied.
- Publication:
-
Technical Physics Letters
- Pub Date:
- April 2007
- DOI:
- 10.1134/S1063785007040013
- Bibcode:
- 2007TePhL..33..273M
- Keywords:
-
- 07.85.Fv;
- 61.72.-y;
- 71.55.Gs;
- 72.40.-w;
- 78.55.Et