Microscopically controlled oxidation of H/Si(1 0 0) by lateral surface electric field studied by emission electron microscopies
Abstract
The ultrathin oxidation of a H/Si(1 0 0) surface with microfabricated pn-junctions was studied by photoemission electron microscopy (PEEM), mirror electron microscopy (MEM) and microscopic X-ray photoelectron spectroscopy (μ-XPS). The ultrathin oxidation inverts the contrast of the junctions in PEEM images. It is found by analyzing the intensity profiles of images that the potential distribution across the pn-junctions is also inverted by the oxidation. The charging of the oxide by ultraviolet irradiation from a light source of PEEM is attributed as the cause of the inversion of the contrast shown by μ-XPS and MEM.
- Publication:
-
Surface Science
- Pub Date:
- October 2007
- DOI:
- 10.1016/j.susc.2007.05.026
- Bibcode:
- 2007SurSc.601.4675F