Effect of a Fe 3Si buffer layer for the growth of semiconducting β-FeSi 2 thin film on stainless steel substrate
Abstract
This paper reports a Fe 3Si buffer layer for the growth of semiconducting β-FeSi 2 film on stainless steel (SS) substrate. It was formed through the silicidation reaction of Fe and Si at a Fe-rich interface at an elevated temperature of 600 °C. β-FeSi 2 film was deposited on it at low temperature around 400 °C. Auger electron spectroscopy depth profile showed that the inter-diffusions of Fe, Si and impurities contained in the SS substrate were effectively blocked by the buffer layer. The adhesive ability to SS substrate and crystallinity of β-FeSi 2 film were clearly improved by the introduction of the buffer layer, thus also induced the decrease of residual carrier concentration, which was revealed by capacity-voltage measurement.
- Publication:
-
Journal of Crystal Growth
- Pub Date:
- September 2007
- DOI:
- 10.1016/j.jcrysgro.2007.06.007
- Bibcode:
- 2007JCrGr.307...82L
- Keywords:
-
- 68.55.-a;
- 81.15.-z;
- Thin film structure and morphology;
- Methods of deposition of films and coatings;
- film growth and epitaxy