Enhancement-Mode GaAs MOSFETs With an {In}_{0.3} {Ga}_{0.7}{As} Channel, a Mobility of Over 5000 {cm}^{2}/{V} \cdot {s}, and Transconductance of Over 475 mu{S}/mu{m}
Abstract
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- December 2007
- DOI:
- 10.1109/LED.2007.910009
- Bibcode:
- 2007IEDL...28.1080H