Formation of nanometer-size high-density pits on epitaxial diamond (100) films
Abstract
We report the formation of pits having widths of approximately 10 nm and a density of 2.5 × 10 11/cm 2 on epitaxial diamond (100) films. The pits are formed by etching the films using atomic hydrogen at a substrate temperature of approximately 500 °C. Exposure to oxygen followed by etching with atomic hydrogen forms additional pits. We propose that the high-density pits are formed due to etching that occurs both perpendicular and parallel to the surface.
- Publication:
-
Diamond and Related Materials
- Pub Date:
- 2007
- DOI:
- 10.1016/j.diamond.2007.06.001
- Bibcode:
- 2007DRM....16.1727S
- Keywords:
-
- Diamond films;
- Etching;
- Pits;
- Scanning tunneling microscopy;
- Micro-Raman spectroscopy