Single-electron quantum dot in Si /SiGe with integrated charge sensing
Abstract
Single-electron occupation is an essential component to the measurement and manipulation of spin in quantum dots, capabilities that are important for quantum information processing. Si /SiGe is of interest for semiconductor spin qubits, but single-electron quantum dots have not yet been achieved in this system. We report the fabrication and measurement of a top-gated quantum dot occupied by a single electron in a Si /SiGe heterostructure. Transport through the quantum dot is directly correlated with charge sensing from an integrated quantum point contact, and this charge sensing is used to confirm single-electron occupancy in the quantum dot.
- Publication:
-
Applied Physics Letters
- Pub Date:
- November 2007
- DOI:
- 10.1063/1.2816331
- arXiv:
- arXiv:0710.3725
- Bibcode:
- 2007ApPhL..91u3103S
- Keywords:
-
- 73.63.Kv;
- 73.40.Lq;
- Quantum dots;
- Other semiconductor-to-semiconductor contacts p-n junctions and heterojunctions;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 3 pages, 3 figures, accepted version, to appear in Applied Physics Letters