Relaxation of transport properties in electron-doped SrTiO3
Abstract
We electron-dope single crystal samples of SrTiO3 by exposing them to Ar+ irradiation and observe carrier mobility similar in its magnitude and temperature dependence to the carrier mobility in other electron-doped SrTiO3 systems. We find that some transport properties are time dependent. In particular, the sheet resistance increases with time at a temperature-dependent rate, suggesting an activation barrier on the order of 1eV. We attribute the relaxation effects to diffusion of oxygen vacancies—a process with energy barrier similar to the observed activation energy.
- Publication:
-
Applied Physics Letters
- Pub Date:
- October 2007
- DOI:
- 10.1063/1.2795336
- arXiv:
- arXiv:0708.1610
- Bibcode:
- 2007ApPhL..91o1104S
- Keywords:
-
- 72.20.Fr;
- 61.80.Jh;
- 61.82.Ms;
- 66.30.Lw;
- 61.72.Ji;
- Low-field transport and mobility;
- piezoresistance;
- Ion radiation effects;
- Insulators;
- Diffusion of other defects;
- Point defects and defect clusters;
- Condensed Matter - Other Condensed Matter
- E-Print:
- doi:10.1063/1.2795336