Characterization of the Schottky barrier in SrRuO3/Nb:SrTiO3 junctions
Abstract
Internal photoemission spectroscopy was used to determine the Schottky barrier height in rectifying SrRuO3/Nb-doped SrTiO3 junctions for 0.01 and 0.5wt% Nb concentrations. Good agreement was obtained with the barrier height deduced from capacitance-voltage measurements, provided that a model of the nonlinear permittivity of SrTiO3 was incorporated in extrapolating the built-in potential, particularly for high Nb concentrations. Given the generic polarizability of perovskites under internal/external electric fields, internal photoemission provides a valuable independent probe of the interface electronic structure.
- Publication:
-
Applied Physics Letters
- Pub Date:
- April 2007
- DOI:
- 10.1063/1.2719157
- arXiv:
- arXiv:cond-mat/0703358
- Bibcode:
- 2007ApPhL..90n3507H
- Keywords:
-
- 73.30.+y;
- 73.40.Qv;
- 73.40.Ei;
- 77.22.Ch;
- 79.60.Jv;
- 73.20.At;
- Surface double layers Schottky barriers and work functions;
- Metal-insulator-semiconductor structures;
- Rectification;
- Permittivity;
- Interfaces;
- heterostructures;
- nanostructures;
- Surface states band structure electron density of states;
- Condensed Matter - Strongly Correlated Electrons;
- Condensed Matter - Materials Science
- E-Print:
- 15 pages, 3 figures