Properties of epitaxial LaMnO3/SrTiO3 interfaces.
Abstract
Electronic effects at interfaces between dissimilar oxides are known to have fundamental consequences on their transport and magnetic properties. Interfaces between the band insulator SrTiO3 and the antiferromagnetic charge-transfer insulator LaMnO3 provide a particularly interesting platform to test such effects. Both perovskites are grown epitaxially by pulsed-laser deposition, and electron energy loss spectra (EELS) collected in a scanning transmission electron microscope (STEM) show interfacial valence changes on the Mn-sites, while Ti remains in a 4+ state even in direct contact with the LaO layer of the LaMnO3. This observation is fully consistent with computational results obtained for such structures using the self-interaction corrected (SIC) local spin density (LSD) method. In this presentation, we discuss the physical origin and consequences of these valence changes in single interfaces as well as LaMnO3/SrTiO3 superlattices. This research was sponsored by the Office of Basic Energy Sciences, Division of Materials Sciences and Engineering, U.S. Department of Energy, under contract DE-AC05-00OR22725 with Oak Ridge National Laboratory (ORNL), managed and operated by UT-Battelle, LLC, and ORNL's Laboratory Directed Research and Development Program.
- Publication:
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APS March Meeting Abstracts
- Pub Date:
- March 2007
- Bibcode:
- 2007APS..MARD11010C