Non-polar GaN structures on γ-LiAlO2 grown by plasma-assisted molecular beam epitaxy
Abstract
A-plane lithium aluminate (LAO) in γ-phase crystal structure, γ-LiAlO2 (100), was used as the substrate which was grown by Czochralski pulling method. With a lattice mismatch of [0001]GaN||[010]LAO ∼ 0.3% and [1120]GaN||[001]LAO ∼1.7%, γ-LiAlO2 (100) has a much smaller lattice mismatch with the GaN (1100) than the conventional substrates. M-plane GaN epilayer was successfully grown by plasma-assisted molecular beam epitaxy. X-ray diffraction theta/two-theta scan shows a diffraction peak due to m-plane GaN. Raman scattering confirms Raman modes from the GaN (1100) structure. Cathodoluminescence yields a peak at 363 nm at room temperature. Nanostructures were explored also. Comparisons to structures grown on the c-plane will be presented.
- Publication:
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APS March Meeting Abstracts
- Pub Date:
- March 2007
- Bibcode:
- 2007APS..MARA40004T