High pressure magnetotransport properties of single crystals and thin films of the diluted magnetic semiconductor Sb2-xVxTe3

Bulk, single crystals of the narrow band gap semiconductor Sb_2-xV_xTe₃ doped with x = 0.03 display a ferromagnetic transition at 22 K. Both carrier concentration and Curie temperature have been shown to be strongly affected by pressure in these crystals, thus high pressure experiments allow a way to study the magnetic interactions in these materials. Recently, by employing molecular beam epitaxy (MBE) thin film growth, the vanadium concentration in Sb_2-xV_xTe₃ was increased by an order of magnitude, resulting in Curie temperatures of 104K and 177K for x = 0.15 and 0.35, respectively. Here, we present the temperature dependent magnetotransport properties of both single crystal and MBE thin film samples for pressures up to 1.5 GPa. Trends with pressure will be discussed in light of RKKY-type models for the ferromagnetic interaction.