Field Effect Transistor Constructed of Novel Structure With Short-Period (GaAs)n/(AlAs)m Superlattice
Abstract
A new type of field effect transistor is developed and realized. It is based on ballistic transport of hot electrons in a short GaAs channel. The channel is restricted by two short period superlattices. The gate has a V-grove shape. The transconductance of this FET exceeds 1 Sm/mm.
- Publication:
-
Nonequilibrium Carrier Dynamics in Semiconductors
- Pub Date:
- 2006
- DOI:
- 10.1007/978-3-540-36588-4_52
- Bibcode:
- 2006ncds.book..233T
- Keywords:
-
- Physics