Surface modification of Si(111) substrate by iron ion implantation: Growth of a thin β-FeSi2 layer
Abstract
The processes in the synthesis of a thin layer of the semiconducting iron silicide (β-FeSi2) on the surface of a single-crystal Si(111) substrate by implantation of 195 keV Fe ions with a dose of 8×1017cm-2 are investigated. Using Rutherford backscattering spectrometry, x-ray diffraction and cross-sectional transmission electron microscopy, the structure and the phase composition of the synthesized layers are studied. The infrared transmittance spectra show the absorption at 310cm-1 as an indication of the initial nucleation of β-FeSi2 precipitates during the implantation of iron into silicon substrate.
- Publication:
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Review of Scientific Instruments
- Pub Date:
- March 2006
- DOI:
- Bibcode:
- 2006RScI...77cC108A
- Keywords:
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- 81.65.-b;
- 61.72.Ww;
- 78.30.Hv;
- Surface treatments;
- Doping and impurity implantation in other materials;
- Other nonmetallic inorganics