Compositional analysis of Hf xSi yO 1- x- y thin films by medium energy ion scattering (MEIS) analysis
Abstract
HfxSiyO1-x-y layers with thicknesses of 2 and 10 nm were measured by medium energy ion scattering (MEIS) with a toroidal electrostatic analyzer (TEA), in which the yield of MEIS spectra was found to decrease with decreasing energy in contrast to conventional Rutherford backscattering spectrometry (RBS), due to the increase in neutralized particles.
The HfxSiyO1-x-y spectra obtained by MEIS were corrected with a ratio of the simulated MEIS yield to measured yield for a virgin Si at each energy. The corrected HfxSiyO1-x-y spectra were analyzed and the compositions for 2 and 10 nm thick HfxSiyO1-x-y were obtained by MEIS. An interface layer was found to exist between the Si substrate and the HfxSiyO1-x-y layer.- Publication:
-
Nuclear Instruments and Methods in Physics Research B
- Pub Date:
- August 2006
- DOI:
- 10.1016/j.nimb.2006.04.007
- Bibcode:
- 2006NIMPB.249..246K
- Keywords:
-
- Compositional analysis;
- MEIS;
- Hf<SUB>x</SUB>Si<SUB>y</SUB>O<SUB>1-x-y</SUB>;
- TEA;
- High-k;
- 82.80.Yc;
- 77.55.+f;
- 61.18.Bn;
- Rutherford backscattering and other methods of chemical analysis;
- Dielectric thin films;
- Atom molecule and ion scattering