The temperature dependence of the band gap shrinkage due to the electron phonon interaction in AlxGa1-xAs
Abstract
The photoluminescence spectrum of band edge transitions in AlxGa1-xAs is studied as a function of temperature and electron concentration. The parameters that describe the temperature dependence redshift of the band edge transition energy are evaluated using different models. We find that a semi-empirical relation based on a phonon dispersion related spectral function leads to an excellent fit to the experimental data.
- Publication:
-
Journal of Physics Condensed Matter
- Pub Date:
- February 2006
- DOI:
- 10.1088/0953-8984/18/5/021
- arXiv:
- arXiv:cond-mat/0503611
- Bibcode:
- 2006JPCM...18.1687S
- Keywords:
-
- Condensed Matter - Materials Science
- E-Print:
- doi:10.1088/0953-8984/18/5/021