Oxidation process of SiGe on SOI substrates
Abstract
The oxidation of SiGe film epitaxial grown on top of SOI wafers has been studied. These SiGe/SOI samples were oxidized at 700, 900, 1100 °C. Germanium atoms were rejected from SiGe film to SOI layer. A new Si 1- xGe x ( x is minimal) layer formed at SiGe/Si interface. As the germanium atoms diffused, the new Si 1- xGe x ( x is minimal) layer moved to Si/SiO 2 interface. Propagation of threading dislocation in SiGe film to SOI substrate was hindered by the new SiGe/Si interface. Strain in SOI substrate transferred from SiGe film was released through dislocation nucleation and propagation inner. The relaxation of SiGe film could be described as: strain relaxed through strain equalization and transfer process between SiGe film and SOI substrates. Raman spectroscopy was used to characterize the strain of SiGe film. Microstructure of SiGe/SOI was observed by transmission electron microscope (TEM).
- Publication:
-
Applied Surface Science
- Pub Date:
- June 2006
- DOI:
- 10.1016/j.apsusc.2005.07.066
- Bibcode:
- 2006ApSS..252.5627J