Strongly oriented BST films on La 0.9Sr 1.1NiO 4 electrodes deposited on various substrates for integration of high capacitances on silicon
Abstract
In this study, we demonstrate the successful oriented growth of Ba 0.6Sr 0.4TiO 3( h 0 0)/La 0.9Sr 1.1NiO 4(0 0 l) stacks by pulsed laser deposition on SiO 2/Si for application in integrated capacitances. We show that for specific deposition conditions the La 0.9Sr 1.1NiO 4 layer spontaneously grows along its c-axis both on SiO 2/Si and on Pt/Ti/SiO 2/Si substrates, serving as a template for the subsequent oriented growth of Ba 0.6Sr 0.4TiO 3 (BST). Moreover, as the resistivity of the La 0.9Sr 1.1NiO 4 layer is ∼1 mΩ cm, it also fulfills the function of bottom electrode for integration of perovskite-based capacitors on silicon. This holds the promise of integrating epitaxial BST with very high dielectric constant compared to polycrystalline BST films. Still, preliminary capacitance measurements on Al/BST/La 0.9Sr 1.1NiO 4/SiO 2/Si capacitors indicate that the stack deposition needs further optimization.
- Publication:
-
Applied Surface Science
- Pub Date:
- February 2006
- DOI:
- 10.1016/j.apsusc.2005.09.052
- Bibcode:
- 2006ApSS..252.3085G
- Keywords:
-
- 68.55;
- 81.15.Fg;
- Laser deposition