Study of the Effects of the SiC Doping on the Critical Current Density of the Ti-sheathed MgB2 Superconducting Wires
Abstract
The effects of the SiC doping on the magnetic critical current density (Jc) of the Ti-sheathed MgB2 superconducting wires were studied for the first time. Two groups of Ti-sheathed MgB2 wire samples were prepared and studied: for the first group, the size of the SiC particles was 20 nm and the concentrations were 5%, 10%, and 15%; for the second group, the concentration of the SiC dopant was 10% and the sizes of the SiC particles were 20 nm, 45 nm, and 100-200 nm. Contrary to the Jc results reported on the SiC-doped Fe-sheathed MgB2 wires, we found that the Jc for the SiC-doped Ti-sheathed MgB2 wires decreases with both the concentration and particle size of the SiC dopant. We found that only for the wires with 100-200 nm SiC size, the Jc is greater than that of the undoped MgB2 wires. This unusual dependence of Jc on the size and concentration of the SiC dopant is discussed in association with the results from the magnetization, electrical resisitivity, x-ray diffraction and scanning electron microscopy measurements.
- Publication:
-
APS Texas Sections Fall Meeting Abstracts
- Pub Date:
- October 2006
- Bibcode:
- 2006APS..TSFCM2003L