Towards a 160 kBit molecular electronic memory at 10^11 Bits/cm^2
Abstract
Since its inception by Avirim and Ratner in 1974, molecular-based electronics has emerged as a promising alternative to scaled CMOS technology and its eventual integration limit. Here we present progress towards an electronically configurable, molecule-based 160,000 Bit random access memory at a Bit density approaching 10^11 Bits/cm^2. This device is based on a cross-bar architecture in which the active switching elements are bi-stable [2]-rotaxane supramolecules sandwiched between perpendicular arrays of SNAP-fabricated [1] metallic and n-Si nanowires at 34 nm pitch. Challenges in memory fabrication and testing will be discussed. [1] Science 300, 112 (2003); J. App. Phys. 96, 5921 (2004).
- Publication:
-
APS March Meeting Abstracts
- Pub Date:
- March 2006
- Bibcode:
- 2006APS..MARP16008G