Thickness dependence of the properties of MgB2 films grown by hybrid physical-chemical vapor deposition
Abstract
Properties of pure MgB2 films of different thicknesses (up to ∼1 μm) grown by hybrid-physical-chemical vapor deposition on sapphire substrates were studied. In accordance with the previous results for the films with thicknesses up to about 400 nm, Tc of the films on Al2O3 levels off at a value of 40.0 - 40.5 K at thicknesses larger than 200 nm. The residual resistivity, ρ0, monotonically decreases with thickness, which is caused by a reduction of the surface and interface scattering (size effect on resistivity). For films with thickness over ∼ 800 nm, ρ0 is below 0.15 μφ.cm and RRR > 60. X-ray studies of the films did not reveal any other phases besides MgB2. In this talk, MgB2 films of even larger thickness and the thickness dependence of critical current density will also be reported.
- Publication:
-
APS March Meeting Abstracts
- Pub Date:
- March 2006
- Bibcode:
- 2006APS..MARN39008P