Half-metallic ferromagnetic semiconductors of V- and Cr-doped CdTe studied from first-principles pseudopotential calculations
Abstract
The electronic structure and the ferromagnetism of V- and Cr-doped zinc-blende semiconductor CdTe have been investigated by spin-polarized calculations with first-principles plane-wave pseudopotential method within the generalized gradient approximation for the exchange-correlation potential. We find that the V- and Cr-doped zinc-blende CdTe show half-metallic behavior with a total magnetic moment of 3.0 and 4.0μ B per supercell, respectively. It may be useful in semiconductor spintronics and other applications.
- Publication:
-
Physica B Condensed Matter
- Pub Date:
- September 2005
- DOI:
- 10.1016/j.physb.2005.05.024
- Bibcode:
- 2005PhyB..366...62Y
- Keywords:
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- 75.50.pp;
- 75.90.+w;
- 71.20.-b;
- Other topics in magnetic properties and materials;
- Electron density of states and band structure of crystalline solids