Hot-electrons and negative differential conductance in GaAs1-xNx
Abstract
We show that the manipulation of the band structure of GaAs by the incorporation of a small amount of N provides a powerful means of tailoring the dynamics of conduction electrons. We observe and model theoretically a strong negative differential velocity (NDV) effect that occurs when electrons are accelerated by an electric field in the highly nonparabolic conduction band of Ga(AsN). The NDV effect is fundamentally different from that occurring in superlattice Bloch oscillators and transferred electron devices, and is of potential interest for emitters and detectors of high-frequency radiation.
- Publication:
-
Physical Review B
- Pub Date:
- July 2005
- DOI:
- 10.1103/PhysRevB.72.033312
- Bibcode:
- 2005PhRvB..72c3312P
- Keywords:
-
- 73.61.Ey;
- 73.23.-b;
- 73.50.Fq;
- III-V semiconductors;
- Electronic transport in mesoscopic systems;
- High-field and nonlinear effects