Temperature rise in crystals subjected to ultrasonic influence
Abstract
The nonuniform temperature distribution in the surface of Hg1-xCdxTe semiconductor crystals during ultrasonic excitation was detected. This phenomenon was associated with a sonic-stimulated temperature rise around dislocations and a macroscopic heating of nonperfect regions. The dislocation moving in an ultrasonic field was considered as a linear thermal source and the temperature distribution around the dislocation was calculated. The discrete distribution of thermal sources is realised for Hg1-xCdxTe solid solutions at the average dislocation density ∼1010 m-2. The model of the sonic-stimulated activation of internal sources of the infrared radiation was proposed.
- Publication:
-
Infrared Physics and Technology
- Pub Date:
- June 2005
- DOI:
- 10.1016/j.infrared.2004.06.008
- Bibcode:
- 2005InPhT..46..388S
- Keywords:
-
- Ultrasound;
- Dislocation;
- Temperature changes;
- Infrared radiation;
- 61.72.Lk;
- 61.72.Hh;
- 81.70.Pg;
- Linear defects: dislocations disclinations;
- Indirect evidence of dislocations and other defects;
- Thermal analysis differential thermal analysis differential thermogravimetric analysis