1000-V, 30-A 4H-SiC BJTs With High Current Gain Krishnaswami, S. ; Agarwal, A. ; Ryu, S. -H. ; Capell, C. ; Richmond, J. ; Palmour, J. ; Balachandran, S. ; Chow, T. P. ; Bayne, S. ; Geil, B. ; Jones, K. ; Scozzie, C. Abstract Publication: IEEE Electron Device Letters Pub Date: March 2005 DOI: 10.1109/LED.2004.842731 Bibcode: 2005IEDL...26..175K