Current-Induced Resistive Effect in Cu/MgO/La0.9Sr0.1 MnO3 Trilayers on SrTiO3 (001) Substrates
Abstract
Cu/MgO/La0.9Sr0.1MnO3 pillars are fabricated on SrTiO3 (001) substrates by the micro-fabrication patterning processes. Their electric transport properties have been measured in the temperature range from the temperature smaller than the Curie one to 300 K. At 125 K there emerges abrupt breaks of output voltage in voltage-current (V-I) curves, corresponding to switching in resistance to metastable states, and finally two closed loops are formed with double threshold biases. Around room temperature the V-I characteristics are non-ohmic and show some gradual hysteresis when sweeping the current in a round-trip scan. A large current-induced resistive change ΔR/R0, ~-63.2%, is obtained under a current density of 1.0×104 Acm-2. Especially, ΔR/R0 depends linearly on the applied current and is independent of the applied magnetic field. The current-induced resistive effect should be of interest for various applications such as switching and field effect devices.
- Publication:
-
Chinese Physics Letters
- Pub Date:
- November 2005
- DOI:
- 10.1088/0256-307X/22/11/058
- Bibcode:
- 2005ChPhL..22.2936F