Charged exciton emission at 1.3 μm from single InAs quantum dots grown by metalorganic chemical vapor deposition
Abstract
We have studied the emission properties of self-organized InAs quantum dots (QDs) grown in an InGaAs quantum well by metalorganic chemical vapor deposition. Low-temperature photoluminescence spectroscopy shows emission from single QDs around 1300nm; we clearly observe the formation of neutral and charged exciton and biexciton states, and we obtain a biexciton binding energy of 3.1meV. The dots exhibit an s-p shell splitting of approximately 100meV, indicating strong confinement.
- Publication:
-
Applied Physics Letters
- Pub Date:
- October 2005
- DOI:
- 10.1063/1.2093927
- arXiv:
- arXiv:cond-mat/0505708
- Bibcode:
- 2005ApPhL..87q2101C
- Keywords:
-
- 81.05.Ea;
- 81.07.Ta;
- 78.67.Hc;
- 78.55.Cr;
- 73.21.La;
- 71.35.Pq;
- 81.15.Gh;
- 81.15.Kk;
- III-V semiconductors;
- Quantum dots;
- Charged excitons;
- Chemical vapor deposition;
- Vapor phase epitaxy;
- growth from vapor phase;
- Condensed Matter - Mesoscopic Systems and Quantum Hall Effect
- E-Print:
- 3 pages, 3 figures, submitted APL