Low-Temperature Cvd Growth of ZnO Films Stimulated by Rf-Discharge Plasma
Abstract
It is firstly reported on a low-temperature modification of the CVD growth system with RF-discharge applied during the growth process. This method allowed us to significantly increase the effective pressure of the atomic oxygen during the deposition, to lower the substrate temperature more than 200 °C, and thus to enhance the stoichiometry and crystal perfection of the growing layers.
- Publication:
-
Physics and Technology of Thin Films, IWTF 2003
- Pub Date:
- June 2004
- DOI:
- 10.1142/9789812702876_0032
- Bibcode:
- 2004pttf.conf..380A