Collimated laser-plasma lithography (CPL) for 90-nm and smaller contacts and vias
Abstract
Collimated laser-Plasma Lithography (CPL) offers potential to match Next Generation Lithography (NGL) needs, ending a pursuit of ever-larger lens NA and ever-smaller k1 process resolution factor. Powered by a laser-produced plasma (LPP) source at 1nm, it capitalizes on mature development of x-ray lithography, which is the only NGL that has produced working chips. JMAR is upgrading its CPL system to increase overall throughput (system power) and is focusing on solving a known industry problem for which CPL presents an advantage: printing sub-90nm contacts in memory chips. The paper will discuss CPL system characteristics and performance. Supporting information on the upgrades to the laser and x-ray generator will be included. Specific resists and mask techniques and the roadmap leading to multi-generational support capability down to the 45nm node will be described.
- Publication:
-
Emerging Lithographic Technologies VIII
- Pub Date:
- May 2004
- DOI:
- 10.1117/12.534379
- Bibcode:
- 2004SPIE.5374..579F