Modulation of Noise in Submicron GaAs/AlGaAs Hall Devices by Gating
Abstract
We present a systematic characterization of fluctuations in submicron Hall devices based on GaAs/AlGaAs two-dimensional electron gas heterostructures at temperatures between 1.5 to 60K. A large variety of noise spectra, from 1/f to Lorentzian, are obtained by gating the Hall devices. The noise level can be reduced by up to several orders of magnitude with a moderate gate voltage of 0.2V, whereas the carrier density increases less than 60% in the same range. The significant dependence of the Hall noise spectra on temperature and gate voltage is explained in terms of the switching processes related to impurities in n-AlGaAs.
- Publication:
-
Physical Review Letters
- Pub Date:
- December 2004
- DOI:
- 10.1103/PhysRevLett.93.246602
- arXiv:
- arXiv:cond-mat/0406444
- Bibcode:
- 2004PhRvL..93x6602L
- Keywords:
-
- 85.30.-z;
- 73.23.-b;
- 74.40.+k;
- Semiconductor devices;
- Electronic transport in mesoscopic systems;
- Fluctuations;
- Condensed Matter - Mesoscopic Systems and Quantum Hall Effect
- E-Print:
- 5 pages, 4 figs