Comment on ``Recombination of excitons bound to oxygen and silicon donors in freestanding GaN''
Abstract
In a recent report, Wysmolek et al. [Phys. Rev. B 66, 245317 (2002)] presented results of a photoluminescence study of donors in GaN. Time-resolved data were used to correlate spectral features associated with recombination processes leaving donors in the ground state and those leaving donors in excited states. The authors quoted donor 1s-2s and 1s-2p transition energies different from values recently reported and impurity state chemical shifts inconsistent with expectation. We recently reported [Freitas et al., Phys. Rev. B 66, 233311 (2002)] a different identification of donor-bound exciton features and an analysis of two-electron satellite features that integrated the effects of excited donor-bound excitons into the analysis. Differences in the two papers are discussed.
- Publication:
-
Physical Review B
- Pub Date:
- April 2004
- DOI:
- 10.1103/PhysRevB.69.157301
- Bibcode:
- 2004PhRvB..69o7301F
- Keywords:
-
- 78.55.Cr;
- 71.35.Ji;
- 71.55.-i;
- III-V semiconductors;
- Excitons in magnetic fields;
- magnetoexcitons;
- Impurity and defect levels