Tight-binding model for the x-ray absorption and emission spectra of dilute GaNxAs1-x at the nitrogen K edge
Abstract
X-ray absorption and fluorescence spectra have been measured at the nitrogen K edge of dilute GaNxAs1-x alloys. The x-ray spectra are in good agreement with an sp3s* tight-binding model in which nitrogen is included in a supercell configuration and the disorder in the nitrogen distribution is neglected. A strong peak in the x-ray absorption spectrum is interpreted as a nitrogen resonant state in the conduction band rather than as an electron-hole exciton. The tight-binding calculation is also in good agreement with the observed nitrogen concentration dependence of the optical band gap.
- Publication:
-
Physical Review B
- Pub Date:
- April 2004
- DOI:
- 10.1103/PhysRevB.69.155210
- Bibcode:
- 2004PhRvB..69o5210N
- Keywords:
-
- 71.15.Ap;
- 71.20.Nr;
- 78.70.Dm;
- 78.70.En;
- Basis sets and related methodology;
- Semiconductor compounds;
- X-ray absorption spectra;
- X-ray emission spectra and fluorescence