Domain walls unmasked during domain duplication in ferromagnetic tunnel junctions
Abstract
This paper highlights the role played by domain walls during domain duplication in ferromagnetic junctions. The evolution of the resistance jumps with reversal field when duplication occurs cannot be exclusively explained by parallel tunnel paths of electrons through regions with parallel and antiparallel magnetization alignment. A model of tunnel resistance taking into account the contribution of domain walls was used to extract their density. The extracted values are in agreement with experimental data.
- Publication:
-
Physical Review B
- Pub Date:
- February 2004
- DOI:
- 10.1103/PhysRevB.69.064430
- Bibcode:
- 2004PhRvB..69f4430R
- Keywords:
-
- 75.60.-d;
- 73.40.Rw;
- 75.40.Mg;
- 75.47.De;
- Domain effects magnetization curves and hysteresis;
- Metal-insulator-metal structures;
- Numerical simulation studies;
- Giant magnetoresistance