Recovery of the luminescence property in sulfur-implanted ZnO thin film
Abstract
The recovery behavior of defect implanted in highly oriented ZnO thin films, deposited on (1 1 2¯ 0) alumina by chemical vapor deposition is studied as a function of annealing time at 800 °C using the photoluminescence technique. The band-edge emission of the film is completely extinguished by behavior implantation. The recovery of the luminescence at 800 °C is observed as weak violet and intense visible emissions. A weak violet emission is observed in samples annealed for 15-60 min. An intense visible emission shifted from 511 to 525 nm for the duration of 15-300 min. Analyses by secondary ion mass spectrometry revealed that the sulfur concentration decreases with increasing annealing time, and indicated, in the high lateral resolution image, that the sulfur in ZnO thin film has a heterogeneous distribution. The emissions due to the recovery are discussed together with the behavior of sulfur in ZnO thin film during annealing.
- Publication:
-
Nuclear Instruments and Methods in Physics Research B
- Pub Date:
- May 2004
- DOI:
- 10.1016/j.nimb.2003.10.016
- Bibcode:
- 2004NIMPB.217..417S