S-Band Operation of SiC Power MESFET With 20 W (4.4 W/mm) Output Power and 60% PAE Henry, H. G. ; Augustine, G. ; Desalvo, G. C. ; Brooks, R. C. ; Barron, R. R. ; Oliver, J. D. ; Morse, A. W. ; Veasel, B. W. ; Esker, P. M. ; Clarke, R. C. Abstract Publication: IEEE Transactions on Electron Devices Pub Date: June 2004 DOI: 10.1109/TED.2004.828279 Bibcode: 2004ITED...51..839H