Directed assembly of Ge islands grown on Au-patterned Si(001)
Abstract
We have achieved one and two-dimensional alignment of Ge islands grown by molecular beam epitaxy on Au-patterned Si(100). Arrays of Au dots and lines are patterned by electron-beam evaporation of 1-2nm of Au through a stencil mask. The dot/line size and spacing as well as the equivalent Au-layer thickness are observed to affect Ge island evolution and size distribution. For a square array of Au dots, and under appropriate Ge deposition conditions, a two-dimensional square lattice of Ge islands extending over tens of microns has been produced. We have produced lattices of Ge islands having a variety of average height (e.g., 62 nm +/- 12 nm and 80 nm +/- 11 nm). Unlike other substrate patterning techniques that require extensive substrate-to-substrate templating, the approach presented here is a fast, effective and versatile method to manipulate island growth kinetics and thereby direct their assembly over large areas. This work is supported in part by the LDRD Program (LBNL) and the U.S. Department of Energy under Contract No. DE-AC03-76SF00098.
- Publication:
-
APS March Meeting Abstracts
- Pub Date:
- March 2004
- Bibcode:
- 2004APS..MARV37001R