Identification of fluorine-decorated defects in silicon
Abstract
We analyzed fluorine-implanted Czochralski(Cz)- and Float-Zone(FZ)-silicon by using positron annihilation spectroscopy. The fluorine was implanted at 30 keV and as-implanted samples show divacancy-like defects extending to a depth of ∼ 250 nm. Annealing at 650 ^oC for varying times of up to 30 minutes removed most of the defects generated during implantation. However, Fluorine-decorated defects remained in the annealed samples. We demonstrate the presence of fluorine-decorated defects by comparing the electron momentum distribution spectra recorded with coincidence Doppler measurement technique on the annealed Cz and FZ samples to the results obtained with a series of alkali halides. Part of this work (ZsJ and PA) was performed under the auspices of the US Department of Energy by the University of California, Lawrence Livermore National Laboratory, under contract No. W-7405-ENG-48 with partial support provided from Basic Energy Sciences, Division of Materials Science.
- Publication:
-
APS March Meeting Abstracts
- Pub Date:
- March 2004
- Bibcode:
- 2004APS..MARS10013J